Solicitation 80NSSC27946811Q Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Closes: October 16, 2026
Published: October 13, 2026
Place of performance: Cleveland, Ohio 44135
Notice type: Announcement Started as Special Notice
Category: Semiconductor & electronic components
PSC: 5961 — Semiconductor Devices and Associated Hardware
Solicitation no.: 80NSSC27946811Q

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Notice archived: October 31, 2026 After this the authority stops publishing it.

Scope

NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA’s Technical End User Team. We are currently only requesting Capability

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10 days left Ohio

59--SWITCH,TOGGLE

DEPT OF DEFENSE.DEFENSE LOGISTICS AGENCY.DLA LAND.DLA LAND COLUMBUS.DLA WEAPONS SUPPORT

NAICS 334419; PSC 59; Place of performance: COLUMBUS, OH

Closes: October 30, 2026
Added: October 20, 2026

10 days left Ohio